FE3FTM Physical and engineering measurements V: 2+0+2 VI: 2+1+2

Dynamic characteristics of measuring instruments. Measurement of displacement (resistive, capacitive, inductive and piezoelectric displacement sensors, interferometers). Measurement of velocity and acceleration. Digital encoders. Vibration measurements. Pressure and liquid and gaseous flow measurement. Liquid level measurement. Measurement of temperature (thermodynamic thermometers, resistive temperature sensors and thermocouples, radiation thermometry).

FE3KM Quantum mechanics V: 2+1+0 VI: 2+1+0

Time independent nonrelativistic Schroedinger equation. Eigenfunctions and eigenenergies.Properties of wave functions. Normalization, orthogonality, completeness. Quantum states. Superposition principle. Time dependent Schroedinger equation. Wave function evolution. Wavepackets. Continuity equation. Linear operators in quantum mechanics. Hamiltonian, momentum operator. Hermitian operators. Eigenvalues and expectation values of observable quantities, comutator. Measurement in quantum mechanics. Expectation value evolution equation. Conservation laws in quantum mechanics. Coordinate and momentum representation. Recasting Shroedinger equation into Jacobi- Hamilton form. WBK method. WBK quantization conditions and tunneling transmission calculation. Quantum theory of orbital momentum. Orbital momentum operators, Lz, L2, L+, L-, their properties,eigenvalues, eigenfunctions. Rigid rotator. Hydrogen atom. Linear harmonic oscillator. Creation and annihilation operators. Schroedinger equation for charged particle in electromagnetic field. Spin. Pauli equation. Rotation matrices. Approximate methods in quantum mechanics. Perturbation method (time independent, non degenerate or degenerate, and time dependent). Variational methods. Numerical methods. Light-matter interaction. Absorption and emission of radiation. Density matrix. Liouville equation.

FE3SF Statistical physics V: 2+1+0 VI: 2+1+0

Equilibrium Statistical Physics: Classical statistical mechanics (Gibbs ensemble, Liouville's equation and theorem). Thermodynamic equilibrium (Gibbs distribution, MB distribution, ideal gas, Van der Waals equation, Coulomb gas). Quantum systems in thermodynamic equilibrium (quantum distributions, ideal quantum gases, Planck's law, photons). Semiconductor statistics of electrons and holes. Nonequilibrium Statistical Physics: BBGKY hierarchy (collision integral, Vlasov kinetic equation, approximation of small perturbation). Boltzmann transport equation (collision integral and properties, elastic collisions). Kinetics of EM radiation (detailed balance, spontaneous and stimulated radiation, photon transport theory, lasers). Fluctuations. Hydrodynamic model.

FE3IDE Pulse and digital electronics V: 3+2+0 VI: 3+2+3

Pulse electronics: Switching properties of diode, BJT and MOSFET. Logic gates in bipolar technology (RTL, DTL, TTL, STTL, ASTTL, ALSTTL, ECL, three stage output). Logic gates in NMOS and CMOS technology. Flip-Flops (positive feedback concept, SR, T, JK, D and MS flip-flops; TTL, ECL, NMOS and CMOS logic). Anstable and monostable circuits. Comparators (differential, Schmidt trigger). Time base generators (Miller, Bootstrap). Digital electronics: Registers. Shift registers. Combinational digital systems (decoders, coders, multiplexers, demultiplexers, PAL, PLA). Sequential digital systems (parallel and serial binary counters, bi-directional counters). Memories (static, dynamic, ROM, PROM, EPROM, EEPROM, NVRAM). Arithmetic and logic units (adders, multipliers). A/D converters. D/A converters.

FE3E2 Electronics 2 V: 3+2+1

Frequency response of amplifiers. Large signal amplifiers (classes A, B and AB, efficiency, distortions, stability, negative feedback). Unipolar transistors (physical models, JFET, enhanced and depletion MOSFET). Amplifiers (JFET and MOSFET amplifiers, CMOS amplifiers, characteristic configurations). Rectifiers (half and full-wave rectifiers, capacitor and L filters, regulated power supplies). Linear oscillators (RC: Wien-Bridge oscillator; LC: Colpitts, Hartley and Pirce's oscillator, crystal oscillators).

FE3E Electromagnetics V: 3+2+0

Electrostatics (Poisson and Laplace equation, uniqueness, energy density and forces, capacitance, conductors and dielectrics in electrical field, method of images). Magnetostatics (scalar and vector potentials, uniqueness, energy density, method of images). Time varying EM field (Faraday's law, inductance, energy density and forces). Electromagnetic field (Maxwell equations, boundary conditions, uniqueness, Lorentz, Coulomb and Hertz gauge, complex treatment of harmonic fields, skin effect, energy of EM field, Poynting's theorem, large distance field). Plane EM waves (in vacuum, dielectrics and conductors, linear and circular polarization, reflection, refraction, Fresnel coefficients).

FE3EEU Components of electronic devices VI: 3+1+1

Electronic and microelectronic components technologies. Thin films technology. p-n junction fabrication. Epitaxial growth. Ion implantation. Pholitography. Passive electronic components. Capacitors-fixed and variable. Varicap diodes. Capcitors in monolitic integrated circuits. Resistors-fixed and variable, thermistors, varistors. Resistors in monolitic integrated circuits. Inductors-air core and iron core. Trasformers: line, pulse, audio frequency, wide band, feroresonant. Transformer design. Electromechanical components. Electromagnetic, reed and vacuum relays. Piezoelectric components. Quartz crystal units. Surface acoustic wave devices. Electric contacts, switches and conectors. Printed circuits. Printed circuits technology and design. Surface mount printed circuits. Chip components-resistors, capacitors and inductors. Reliability of electronic and microelectronic components and systems. Failures, reliability, distribution function. Redundancy. Special-purpose devices. Hall elements, tunnel and Zener diodes, thyristors, LED diodes, photodiodes, HEMT, MODFET, semiconductor lasers. Trends in microelectronics.

FE3ID Pulse and digital electronics V: 3+2+2 VI: 3+2+1